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AA028P1-00的产品特征:
Single Bias Supply Operation (6 V)
22 dBm Typical P1 dBOutput Power at 28 GHz
13.5 dB Typical Small Signal Gain
0.25 μm Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 MT 2010
AA028P1-00的技术参数:
Operating Temperature (T C)............-55°C to +90°C
Storage Temperature (TST )............-65°C to +150°C
Bias Voltage (V D)................................................7 VDC
Power In (PIN ).................................................22 dBm
Junction Temperature (T J)...............................175°C
Alpha,s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10% power added efficiency at 28 GHz.The chip uses Alpha,s proven 0.25μm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are creened for S-parameters and power characteristics prior o shipment for guaranteed performance.A broad range applications exist in both the commercial and high eliability areas where high power and gain are required.