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AA028N1-00的技术资料

来源:深圳市福田区国源电子商行   发布时间:2009/4/16 15:43:34   浏览点击数:1499

AA028N1-00的产品特征:
Single Bias Supply Operation (4.5 V)
3.0 dB Typical Noise Figure at 28 GHz
17 dB Typical Small Signal Gain
0.25μm Ti/Pd/Au Gates
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 MT 2010


AA028N1-00的技术参数:
Operating Temperature (T C)............-55°C to +90°C
Storage Temperature (TST )............-65°C to +150°C
Bias Voltage (V D)................................................6 VDC
Power In (PIN ).................................................10 dBm
Junction Temperature (T J)...............................175°C



AA028N1-00的产品描述:

  Alpha,s three-stage reactively-matched 24-30 GHMMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.0 dB at 28 GHz. The chip uses Alpha,s proven 0.25μm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

   The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.