AA026P2-00的产品特征：
Single Bias Supply Operation (6 V)
17 dB Typical Small Signal Gain
24 dBm Typical P_{1 dB}Output Power  at 26.5 GHz
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD  MT 2010

AA026P2-00的技术参数：
Operating Temperature (T _C)............-55°C to +90°C
Storage Temperature (T_ST )............-65°C to +150°C
Bias Voltage (V _D)................................................7 V_DC
Power In (P_IN ).................................................22 dBm
Junction Temperature (T _J)...............................175°C

  Alpha,s three-stage balanced K band GaAs MMIC powe amplifier has a typical P of 24 dBm and a typical P _{1 dB} SAT of 26 dBm at 26.5 GHz.The chip uses Alpha,s proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance.A broad range of applications exist in both the commercial and military areas where high power and gain are required.