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AA026P1-00的技术资料

来源:深圳市福田区国源电子商行   发布时间:2009/4/16 15:43:34   浏览点击数:1823

AA026P1-00的产品特征:
Single Bias Supply Operation (6 V)
17 dB Typical Small Signal Gain
Output Power
16 dBm Typical P1 dBat 26.5 GHz
0.25 μm Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 MT 2010


AA026P1-00的技术参数:
Operating Temperature (T C)............-55°C to +90°C
Storage Temperature (TST )............-65°C to +150°C
Bias Voltage (V D)................................................7 VDC
Power In (PIN ).................................................16 dBm
Junction Temperature (T J)...............................175°C



AA026P1-00的产品描述:

   Alpha,s three-stage reactively-matched 25-29 GHZ GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P 1 dBof 16 dBm at 26.5 GHz.  The chip uses Alpha,s proven 0.25m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.

   The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.