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AA022P2-00的产品特征:
Single Bias Supply Operation (6 V)
22 dBm Typical P1 dBOutput Power at 23 GHz
14 dB Typical Small Signal Gain
0.25μ m Ti/Pd/Au Gates
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 MT 2010
AA022P2-00的技术参数:
Operating Temperature (T C)............-55°C to +90°C
Storage Temperature (TST )............-65°C to +150°C
Bias Voltage (V D)................................................7 VDC
Power In (PIN ).................................................19 dBm
Junction Temperature (T J)...............................175°C
Alpha,Stwo-stage balanced K band GaAs MMIC powe amplifier has a typical P1 dBof 22 dBm with 13 dB associated gain guaranteed across frequency range21-C23 GHz.The chip uses Alpha,s proven 0.2μm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance.